Spin-momentum locking in the surface mode of topological insulators leads to the surface accumulations of spin-polarized electrons caused by bias currents through topological insulator samples. It is demonstrated in this letter that surface spin-polarized electron accumulations caused by the above bias currents can be sensed by using scanning tunneling microscopy. The experimental results of this sensing are presented for tin-doped bismuth selenide samples by employing iron-coated tungsten tips as well as nonmagnetic tungsten tips. A linear increase in the spin accumulation as a function of bias current through topological insulator samples is observed.

中文翻译：

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扫描隧道显微镜检测拓扑绝缘子中表面自旋极化电子的积累

在拓扑绝缘子的表面模式中自旋动量锁定会导致自旋极化电子的表面积聚，这是由流经拓扑绝缘子样本的偏置电流引起的。在这封信中证明了可以通过使用扫描隧道显微镜来感测由上述偏置电流引起的表面自旋极化电子积累。通过使用铁涂层钨尖端和非磁性钨尖端，对掺锡硒化铋样品给出了这种感测的实验结果。观察到自旋累积的线性增加与通过拓扑绝缘体样本的偏置电流有关。