This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) technologies (180nm-Bulk and 1μm1\mu \text{m} -Silicon-On-Insulator, SOI) and in a wide range of high-temperatures (from 300K to 573K). The results have shown (average gains of Diamond MOSFET in relation to standard MOSFET: 60% for saturation drain current, 51% for transconductance, 10% for transconductance-over-drain current ratio etc.) that LCE and PAMDLE effects tend to be similar for CMOS ICs technological nodes used and the different high temperatures. Therefore, we can conclude, for the first time, that LCE and PAMDLE effects are kept active in different CMOS ICs technological nodes and when the Diamond MOSFET is exposed at high temperatures.

中文翻译：

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LCE 和 PAMDLE 对不同 CMOS IC 节点和高温的影响


本文描述了不同互补金属中金刚石（六角形栅极形状）MOSFET的不同沟道长度效应（PAMDLE效应）的金属-氧化物-半导体场效应晶体管（MOSFET）的纵向角效应（LCE效应）和并联连接的影响- 氧化物半导体 (CMOS) 集成电路 (IC) 技术（180nm 体和 1μm1\mu \text{m} - 绝缘体上硅，SOI）以及各种高温（从 300K 到 573K） 。结果表明（金刚石 MOSFET 相对于标准 MOSFET 的平均增益：饱和漏极电流为 60%，跨导为 51%，跨导漏极电流比为 10% 等）LCE 和 PAMDLE 效应趋于相似针对所使用的 CMOS IC 技术节点和不同的高温。因此，我们首次可以得出结论，LCE 和 PAMDLE 效应在不同的 CMOS IC 技术节点以及当金刚石 MOSFET 暴露在高温下时仍然保持活跃。