This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) technologies (180nm-Bulk and $1\mu \text{m}$ -Silicon-On-Insulator, SOI) and in a wide range of high-temperatures (from 300K to 573K). The results have shown (average gains of Diamond MOSFET in relation to standard MOSFET: 60% for saturation drain current, 51% for transconductance, 10% for transconductance-over-drain current ratio etc.) that LCE and PAMDLE effects tend to be similar for CMOS ICs technological nodes used and the different high temperatures. Therefore, we can conclude, for the first time, that LCE and PAMDLE effects are kept active in different CMOS ICs technological nodes and when the Diamond MOSFET is exposed at high temperatures.

中文翻译：

---

LCE和PAMDLE对不同CMOS IC节点和高温的影响

本文描述了不同互补金属中金刚石（六边形栅极）MOSFET的不同沟道长度效应（PAMDLE效应）的纵向角效应（LCE效应）和金属-氧化物-半导体场效应晶体管（MOSFET）的并联关系的影响-氧化物半导体（CMOS）集成电路（IC）技术（180nm-Bulk and $ 1 \ mu \ text {m} $ -绝缘体上硅（SOI）以及各种高温（从300K到573K）。结果表明（相对于标准MOSFET而言，Diamond MOSFET的平均增益：饱和漏极电流为60％，跨导电流为51％，跨导漏电流比为10％等），LCE和PAMDLE效果趋于相似用于CMOS IC的技术节点和不同的高温。因此，我们可以首次得出结论，当钻石MOSFET暴露在高温下时，LCE和PAMDLE效应在不同的CMOS IC技术节点中保持活跃。