Isochronal annealing was performed on Mg-ion-implanted GaN under 1GPa N₂ ambient pressure for 5min at temperatures of 1573–1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.

在 1GPa N ₂环境压力下，在 1573-1753 K 的温度下对 Mg 离子注入的 GaN 进行等时退火5 分钟。二次离子质谱显示在退火过程中 Mg 原子扩散并引入 H 原子。随着温度的升高，观察到更深的扩散。从霍尔效应测量中，即使对于具有 1573K 最低退火温度的样品也发现了 p 型电导率。对于该样品，受体激活率为 23%，补偿率为 93%。随着退火温度的升高，受体激活率增加到几乎 100%，补偿率降低到 12%。