We report polycrystalline diamond epitaxial growth on β-Ga₂O₃ for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga₂O₃ accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga₂O₃, a diamond thermal conductivity of 11033 W m⁻¹ K⁻¹ and a diamond/β-Ga₂O₃ thermal boundary resistance of 30.21.8 m²K G⁻¹ W⁻¹ were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga₂O₃ electronic devices.

我们报告了在β -Ga ₂ O ₃上的多晶金刚石外延生长，用于器件级热管理。我们专注于在β -Ga ₂ O ₃上建立金刚石生长条件，同时研究各种成核策略。确定了一个生长窗口，在保持界面光滑度的同时产生均匀聚结的薄膜。在β -Ga ₂ O ₃上金刚石生长的首次演示中，金刚石热导率为 11033 W m ^-1 K ^-1和金刚石/ β -Ga ₂ O ₃测量了30.21.8 m ² K G ^-1 W ^-1的热边界电阻。薄膜应力通过防止金刚石薄膜分层的生长优化技术进行管理。这项工作标志着向β -Ga ₂ O ₃电子器件的器件级热管理迈出了重要的第一步。