Janus transition and post transition metal dichalcogenide monolayers such as MoSSe, WSSe, In${}_2$SSe, Ga${}_2$SSe etc. have shown tremendous potential for thermoelectric applications. The properties of these new materials have not been fully studied neither experimentally nor theoretically. We investigate the electronic and thermoelectric properties of Janus Al${}_2$SSe monolayer by performing first-principle calculations based on the Density Functional Theory and Boltzmann transport equations. Structural optimization reveals that Janus Al${}_2$SSe monolayer has a hexagonal structure similar to AlS and AlSe monolayers. The phonon dispersion curves establish the dynamic stability of this monolayer. Our electronic band structure calculations show that Al${}_2$SSe monolayer is an indirect band gap semiconductor having an energy band gap of 2.03 eV. We characterize the transport properties of this monolayer by evaluating them numerically. We find that both n-type and p-type Al${}_2$SSe monolayers are suitable for thermoelectric applications.

Janus过渡和过渡后金属二硫化碳单分子层，例如MoSSe，WSSe，In${}_{\mathrm{2个}}$硒化镓${}_{\mathrm{2个}}$SSe等在热电应用中显示了巨大的潜力。这些新材料的性能尚未进行实验或理论上的充分研究。我们研究Janus Al的电子和热电特性${}_{\mathrm{2个}}$通过基于密度泛函理论和玻尔兹曼输运方程式进行第一性原理计算来形成SSe单层。结构优化表明Janus Al${}_{\mathrm{2个}}$SSe单层具有类似于AlS和AlSe单层的六边形结构。声子色散曲线建立了该单层的动态稳定性。我们的电子能带结构计算表明${}_{\mathrm{2个}}$SSe单层是具有2.03eV的能带隙的间接带隙半导体。我们通过数值评估来表征此单层的传输特性。我们发现n型和p型Al${}_{\mathrm{2个}}$SSe单层适用于热电应用。