In this study, a Cu/Cu₃Sn–Cu/Cu interconnection can be achieved based on solder-filled microporous copper (MPC) as interlayer via a current-assisted thermal compression bonding. The high-temperature soldering connection materials can be used in the third-generation semiconductor packaging, so as to meet the promising application in high-temperature power device packaging. The influence of auxiliary current on the microstructure evolution of Cu–Sn IMCs and its formation mechanism were studied. Experiments show that the action of Joule heat coupled with the electron wind significantly enhanced the interfacial reaction at the Cu/Sn metallization interface. The microstructure of Cu₆Sn₅ changed from scallop-like into columnar due to constitutional supercooling, and the dispersion distribution of Cu₆Sn₅ also changed. The growth constitutive equations of Cu₃Sn in bondlines were established under current-assisted thermal compression bonding process.

中文翻译：

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基于焊料填充微孔铜作为夹层的Cu/Cu3Sn-Cu/Cu互连通过电流辅助热压键合的形成机制

在这项研究中，基于焊料填充的微孔铜 (MPC) 作为中间层，可以实现Cu/Cu _{3 Sn-Cu/Cu 互连}通过电流辅助热压键合。该高温焊接连接材料可用于第三代半导体封装，满足在高温功率器件封装中的广阔应用前景。研究了辅助电流对Cu-Sn IMCs微观结构演变的影响及其形成机制。实验表明，焦耳热与电子风耦合的作用显着增强了 Cu/Sn 金属化界面处的界面反应。_{Cu 6} Sn ₅的显微组织因结构过冷从扇贝状转变为柱状，Cu ₆ Sn ₅的弥散分布也发生了变化。Cu的生长本构方程₃ Sn inbondlines 是在电流辅助热压键合工艺下建立的。