This paper presents the results from a study on the effect of 10 MeV electron irradiation on polyimide (PI)–tungsten oxide $\left(\text{W}{\text{O}}_{\text{2}}\right)$ composites. The electron flux (fluence rate) was $\text{3.5}\times 10^{15}$ electrons $\text{c}{\text{m}}^{\text{−2}}\text{se}{\text{c}}^{\text{−1}}$. A single absorbed dose varied between $10-20\text{kGy}$ with the maximum total absorbed dose being $10\text{MGy}$. The morphological, physicomechanical, and dielectric properties of the samples were studied before and after irradiation with fast electrons, at various accumulated doses. It was found that irradiation with electrons at the maximum dose leads to an increase in the roughness of the PI surface, with an increase in average roughness from 28 to 46 nm, and for the $\text{PI/W}{\text{O}}_{\text{2}}$ composite the roughness is practically unchanged, from 55 nm pre-irradiation to 58 nm post-irradiation. Irradiation of PI with fast electrons increases its Vickers microhardness by 39%, while that of the $\text{PI/W}{\text{O}}_{\text{2}}$ composite decreases by 10% post-irradiation. At a maximum absorbed dose of $10\text{MGy}$, the dielectric constant PI decreases by almost 20%, while fast electron irradiation of the $\text{PI/W}{\text{O}}_{\text{2}}$ composite has practically no effect on the dielectric constant.

本文介绍了10 MeV电子辐照对聚酰亚胺（PI）-氧化钨的影响的研究结果 $\left(\text{w ^}{\text{Ø}}_{\text{2个}}\right)$复合材料。电子通量（通量率）为$\text{3.5}\times \mathrm{1个}{0}^{15}$ 电子 $\text{C}{\text{米}}^{\text{−2}}\text{SE}{\text{C}}^{\text{-1}}$。单个吸收剂量在$10-20\text{G}$ 最大总吸收剂量为 $10\text{MGy}$。在快速电子辐照之前和之后，以不同的累积剂量研究了样品的形态，物理力学和介电性能。发现最大剂量的电子辐照会导致PI表面的粗糙度增加，平均粗糙度从28 nm增加到46 nm，并且对于$\text{PI / W}{\text{Ø}}_{\text{2个}}$复合材料的粗糙度从辐照前的55 nm到辐照后的58 nm实际上没有变化。用快速电子辐照PI可使维氏显微硬度提高39％，而对$\text{PI / W}{\text{Ø}}_{\text{2个}}$辐照后复合材料减少10％。最大吸收剂量为$10\text{MGy}$，介电常数PI降低了近20％，而电子的快速辐照 $\text{PI / W}{\text{Ø}}_{\text{2个}}$ 复合材料对介电常数几乎没有影响。