The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with other elements. We focus on microdisk lasers with various types of the In(Ga)As quantum dots (QDs). Deep localization of charge carriers in spatially separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-radiative recombination in deep mesas. Thus, using conventional epitaxial structures and relatively simple post-growth processing methods, it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures. The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using III–V heterostructures grown on silicon.

本文的主题是微激光，其发射光谱由耳语画廊模式确定。由于光在侧壁上的全内反射，因此可以实现高Q值，直到直径与波长相当为止。发光主要发生在结构的平面中，这有利于微激光器与其他元件的集成。我们专注于具有各种类型的In（Ga）As量子点（QD）的微盘激光器。电荷载流子在空间上分开的区域中的深定位抑制了横向扩散，并有可能克服深台面中非辐射复合的不良影响。因此，使用常规的外延结构和相对简单的后生长处理方法，有可能实现小型微型激光器，该微型激光器能够在升高的温度下没有温度稳定的情况下运行。QD对外延和制造缺陷的低灵敏度允许使用在硅上生长的III–V异质结构制造微激光器。