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Simplified High-Voltage Short-Pulse Power Modulator for DBD Plasma Application
IEEE Transactions on Plasma Science ( IF 1.3 ) Pub Date : 2021-03-23 , DOI: 10.1109/tps.2021.3064894
Ajeet Kumar Dhakar 1 , Satish Kumar Rai 2 , Vivek Kumar Saini 1 , Surender Kumar Sharma 3 , Udit Narayan Pal 1
Affiliation  

Dielectric barrier discharge (DBD)-based plasma reactor and lamp are widely used for the growing areas of medical science, bacterial disinfection, pollution control, surface treatment, and so on. In this article, a simplified high-frequency, high-voltage short-pulse power modulator (HV-SPPM) is proposed for DBD plasma sources that are effectively capacitive loads. An energy discharge circuit (EDC) has been devised in the HV-SPPM to terminate the high-voltage pulses increase indefinitely for a capacitive load, which causes damage to the pulse power modulator. The HV-SPPM is using a wide bandgap (WBG) device without having a dissipative snubber circuit on primary side and magnetic compression circuit. The performance of the HV-SPPM has been validated experimentally by using a suitable DBD plasma-UV load. In the proposed HV-SPPM, a series diode with resistor has been introduced across the DBD plasma-UV lamp to damp out the sinusoidal oscillations between DBD capacitance and leakage inductance of the transformer. The HV-SPPM is capable to generate negative voltage pulses up to 6 kV and pulse width 800 ns with frequency variation up to 50 kHz. The proposed arrangement makes the HV-SPPM more compact, lightweight, simple, and highly efficient with very short rise and fall times voltage pulses suitable for the DBD plasma applications.

中文翻译:


用于 DBD 等离子体应用的简化高压短脉冲功率调制器



基于介质阻挡放电(DBD)的等离子体反应器和灯广泛应用于医学、细菌消毒、污染控制、表面处理等不断发展的领域。在本文中,提出了一种简化的高频高压短脉冲功率调制器(HV-SPPM),用于有效容性负载的 DBD 等离子体源。 HV-SPPM 中设计了能量放电电路 (EDC),以终止电容性负载的高压脉冲无限增加,从而导致脉冲功率调制器损坏。 HV-SPPM 使用宽带隙 (WBG) 器件,初级侧没有耗散缓冲电路,也没有磁压缩电路。 HV-SPPM 的性能已通过使用合适的 DBD 等离子体-UV 负载进行了实验验证。在所提出的 HV-SPPM 中,在 DBD 等离子体紫外灯两端引入了一个带电阻器的串联二极管,以抑制 DBD 电容和变压器漏感之间的正弦振荡。 HV-SPPM 能够生成高达 6 kV 的负电压脉冲,脉冲宽度为 800 ns,频率变化高达 50 kHz。所提出的布置使 HV-SPPM 更加紧凑、轻便、简单且高效,具有非常短的上升和下降时间电压脉冲,适合 DBD 等离子体应用。
更新日期:2021-03-23
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