Wide-bandgap all-inorganic CsPbIBr ₂ solar cells with MoO _x /Ag/TeO ₂ composite transparent electrode have been firstly used to construct a 4T perovskite/Si-heterojunction tandem cells. The calculation results showed that the long wavelength transmission (600 to 1100 nm) of MoO _x /Ag film can be enhanced remarkably by adding a TeO ₂ optical capping layer. This resulted in an obviously increase of the PCE (J _SC ) from 10.70% (17.56 mA/cm ² ) to 14.76% (24.67 mA/cm ² ) for corresponding bottom Si cell in CsPbIBr ₂ /Si devices, although the PCE of top CsPbIBr ₂ cell decreased from 17.52% to 16.58%, the overall PCE of tandem device has increased from 28.22% to 31.34%. This J _SC -dependent PCE improvement mainly came from the more balanced light absorption, which can be understood by the optical interference induced light field redistributions in CsPbIBr ₂ /Si devices. Specially, comparing with the original Si cell, the J _SC and PCE losses in bottom Si cell have been suppressed to about 33% and 32%, which are superior to most the reported pervoskite/Si tandem cells. Therefore, the tandem of Si cell and CsPbIBr ₂ cell with optimized MoO _x (20 nm)/Ag(8 nm)/TeO ₂ (50 nm) transparent electrode could be the promising cost-effective photovoltaic in the future. This work is instructive to the fabrication of pervoskite/Si tandem solar cells.

中文翻译：

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带有MoO _x / Ag / TeO ₂复合透明阳极的宽带隙全无机CsPbIBr ₂顶部电池，用于高效的四端子钙钛矿/硅串联太阳能电池

具有MoO _x / Ag / TeO ₂复合透明电极的宽带隙全无机CsPbIBr ₂太阳能电池 首先被用于构建4T钙钛矿/ Si异质结串联电池。计算结果表明， 通过添加TeO ₂光学覆盖层，可以显着提高MoO _x / Ag膜 的长波透射率（600至1100 nm） 。这导致 CsPbIBr ₂ / Si器件中相应底部Si单元的PCE（J _SC ）从10.70％（17.56 mA / cm ² ）明显增加到14.76％（24.67 mA / cm ²） ，尽管顶部的PCE CsPbIBr ₂单元数量从17.52％下降到16.58％，串联设备的整体PCE从28.22％增加到31.34％。这种 依赖于J _SC的PCE改进主要来自更加平衡的光吸收，这可以通过CsPbIBr ₂ / Si器件中的光干涉引起的光场重新分布来理解 。特别地，与原始的硅电池相比，底部硅电池的J _SC和PCE损失已被抑制到大约33％和32％，这优于大多数报道的钙钛矿/硅串联电池。因此，具有优化的MoO _x （20 nm）/ Ag（8 nm）/ TeO ₂的Si细胞和CsPbIBr ₂细胞 串联 （50 nm）透明电极可能会成为未来有希望的具有成本效益的光伏电池。这项工作对钙钛矿/硅串联太阳能电池的制造具有指导意义。