In this work, the properties of gallium oxide (Ga ₂ O ₃ ) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga ₂ O ₃ films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga ₂ O ₃ films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga ₂ O ₃ gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of −1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45 $\times \,\, 10^{-15}$ Hz $^{-1}$ . It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array.

中文翻译：

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带有栅栅和Ga 2 O 3栅极绝缘层的GaN基鳍状通道阵列金属氧化物半导体高电子迁移率晶体管的制备与表征

在这项工作中，作为镓 基金属氧化物半导体高电子迁移率晶体管（MOSHEMT）的栅极绝缘体层，探索了氧化镓（Ga ₂ O ₃）的性质及其与GaN基材料的出色界面性质。一种新颖的蒸汽冷却冷凝系统被用来沉积高质量的Ga ₂ O ₃膜，该膜具有高绝缘性和低缺陷，适合于栅极绝缘层。Ga ₂ O _3的特性通过实现具有凹栅和不同沟道宽度的基于GaN的鳍沟道阵列MOSHEMT，可以进一步探索薄膜。与平面沟道结构相比，具有Ga ₂ O ₃栅绝缘层的鳍式沟道MOSHEMT具有更高的直流，高频和闪烁噪声性能 。对于具有300nm宽沟道的GaN基鳍状沟道阵列MOSHEMT，这些器件表现出卓越的性能，其最大非本征跨导为194.2 mS / mm，阈值电压为-1.4 V，非本征单位增益截止频率为6.4 GHz，最大值振荡频率为14.8 GHz，归一化噪声功率为8.45 $ \ times \，\，10 ^ {-15} $ 赫兹 $ ^ {-1} $ 。还证明了通过减小​​鳍通道阵列的宽度可以改善相关性能。