A novel low loss lateral insulated gate bipolar transistor (LIGBT) with high voltage level is designed and studied in this paper, and is proposed with assisted depletion N-region (AD) and P-buried layer (PB) in the bulk Si substrate, named PBAD LIGBT. The proposed PBAD LIGBT utilizes the idea of electric field modulation (EFM) to greatly improve the breakdown voltage, which optimizes the lateral and longitudinal electric field distribution by introduced high electric field peak. Therefore, compared with conventional (Conv.) LIGBT, the shortened drift length of proposed PBAD LIGBT is beneficial to improve the forward and switching characteristics at the same time, while maintaining the same breakdown characteristics. When the breakdown voltage reaches 360 V, according to the TCAD simulation results, the drift length of proposed PBAD LIGBT is $20{\mu }\text{m}$ , which is 71.4% shorter than that of Conv. LIGBT of $70{\mu }\text{m}$ . As a result of shortening drift length, the forward voltage drop and turn-off loss of proposed PBAD LIGBT are reduced by 51.4% and 68.5%, respectively. The simulated trade-off curves show that, proposed PBAD LIGBT achieves significantly improved trade-off performance between turn-off loss and forward voltage drop than that of Conv. LIGBT, including PB LIGBT and AD LIGBT.

中文翻译：

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具有辅助耗尽N区域和P埋层的新型低损耗LIGBT

本文设计并研究了一种新型的高电压低损耗横向绝缘栅双极晶体管（LIGBT），并在体硅衬底中结合辅助耗尽N区（AD）和P埋层（PB）提出了该方案，名为PBAD LIGBT。提出的PBAD LIGBT利用电场调制（EFM）的思想大大提高了击穿电压，通过引入高电场峰值来优化横向和纵向电场分布。因此，与传统的（Conv。）LIGBT相比，所提出的PBAD LIGBT的漂移长度缩短，有利于同时改善正向和开关特性，同时保持相同的击穿特性。当击穿电压达到360 V时，根据TCAD仿真结果，建议的PBAD LIGBT的漂移长度为 $ 20 {\ mu} \ text {m} $ ，比转化次数短71.4％。的LIGBT $ 70 {\ mu} \ text {m} $ 。由于缩短了漂移长度，建议的PBAD LIGBT的正向压降和关断损耗分别降低了51.4％和68.5％。仿真的折衷曲线表明，与Conv相比，所提出的PBAD LIGBT实现了关断损耗与正向压降之间的折衷性能的显着提高。LIGBT，包括PB LIGBT和AD LIGBT。