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Thermal Noise Measurement and Characterization for Modern Semiconductor Devices
IEEE Instrumentation & Measurement Magazine ( IF 1.6 ) Pub Date : 2021-04-12 , DOI: 10.1109/mim.2021.9400958
Chih-Hung Chen

Thermal noise in electronic devices sets the fund amental limitation for receiver front ends [1], analog [2], mixed-signal [3], and even digital circuits [4] for their signal-to-noise ratio (SNR) [5], dynamic range, data acquisition rate, and power consumption. Therefore, thermal noise becomes particularly important for emerging applications such as quantum computing (QC) [6] for its qubits' sensitivity and weak signal strength. It is expected that thermal noise will become a hindrance to these emerging applications due to thermal-noise-induced false bit-flips [7]. Therefore, it is crucial to characterize the thermal noise and understand its physical origin in nanoscale devices. These provide insights for material scientists, process engineers, and circuit designers to optimize their devices and circuits' noise performance so that the social and economic advantages offered by the advances in semiconductor technologies can continue.

中文翻译:


现代半导体器件的热噪声测量和表征



电子设备中的热噪声为接收器前端 [1]、模拟 [2]、混合信号 [3] 甚至数字电路 [4] 的信噪比 (SNR) [5] 设定了基本限制]、动态范围、数据采集速率和功耗。因此,热噪声对于量子计算(QC)[6]等新兴应用因其量子位的敏感性和微弱的信号强度而变得尤为重要。由于热噪声引起的错误位翻转,预计热噪声将成为这些新兴应用的障碍[7]。因此,表征热噪声并了解其在纳米级器件中的物理起源至关重要。这些为材料科学家、工艺工程师和电路设计人员提供了优化其器件和电路噪声性能的见解,从而使半导体技术进步带来的社会和经济优势得以持续。
更新日期:2021-04-12
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