Quantum anomalous Hall (QAH) effect presents a promising platform for next generation nano-electronics due to its dissipationless edge states. Unfortunately, until now, QAH materials suitable for practical applications are rare. Based on the first-principles calculations, we found a novel two-dimensional (2D) QAH insulator: WSe₂ monolayer. Both the spin-polarized electronic structure and spin-orbit coupling (SOC) of WSe₂ contribute to the QAH effect. When SOC is ignored, the WSe₂ monolayer is a spin-polarized Dirac half-metal (DHM). Taking SOC into account, a global band gap about 30 meV is opened and the system behaves as an intrinsic Chern insulator with a Curie temperature of 160 K. The non-trivial properties are proved by the nonzero Chern number, quantized anomalous Hall conductivity, and gapless chiral edge states. We expect the material will become a promising candidate for realizing the QAH effect with higher experimental temperature.

量子异常霍尔（QAH）效应由于其无耗散的边缘状态而为下一代纳米电子学提供了一个有希望的平台。不幸的是，直到现在，适用于实际应用的QAH材料仍很少见。基于第一性原理计算，我们发现了一种新颖的二维（2D）QAH绝缘子：WSe ₂单层。WSe ₂的自旋极化电子结构和自旋轨道耦合（SOC）都有助于QAH效应。当SOC被忽略时，WSe ₂单层是自旋极化狄拉克半金属（DHM）。考虑到SOC，打开了约30 meV的全局带隙，系统表现为居里温度为160 K的本征Chern绝缘体。非平凡的特性由非零的Chern数，量化的异常霍尔电导率和无间隙手性边缘态。我们预计该材料将成为在更高的实验温度下实现QAH效应的有希望的候选者。