Abstract

The kinetics of reactive ion etching of an Si, SiO₂, and Si₃N₄ in the C₄F₈ + O₂ + Ar mixture with a varied C₄F₈/O₂ mixing ratio under the conditions of an rf inductive discharge (13.56 MHz) is investigated. Using the methods of plasma diagnostics and simulation, the data on the effect of the initial mixture’s composition on (a) the parameters of the electronic and ionic components of plasma and (b) the concentrations and densities of the fluxes of neutral species are obtained. It is established that nonmonotonic (with the maximum at ∼15% O₂) changes in the etching rates for all three materials with an increasing O₂ fraction in the mixture are provided by an increase in the atomic fluorine flux density with a simultaneous decrease in the effective probability of a heterogeneous chemical reaction with them. It is demonstrated that the behavior of the latter parameter does not reflect the changes in the kinetics of polymerization on the treated surface; however, this can be due to the heterogeneous processes involving oxygen atoms.

中文翻译：

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C 4 F 8 + O 2 + Ar等离子体中Si，SiO 2和Si 3 N 4的离子刻蚀动力学：C 4 F 8 / O 2混合比的影响

摘要

在rf感应放电条件下，在C ₄ F ₈ / O ₂混合比变化的C ₄ F ₈ + O ₂ + Ar混合物中，Si，SiO ₂和Si ₃ N ₄的反应离子刻蚀动力学（13.56 MHz）被研究。使用等离子体诊断和模拟方法，获得有关初始混合物组成对（a）等离子体电子和离子成分参数以及（b）中性物质通量的浓度和密度的影响的数据。已确定非单调性（最大O ₂约为15％）随着混合物中O ₂分数的增加，所有三种材料的蚀刻速率都发生了变化，这是由于原子氟通量密度的增加，同时与它们的异质化学反应的有效概率降低所致。证明了后一个参数的行为不能反映在处理过的表面上聚合动力学的变化。然而，这可能是由于涉及氧原子的异质过程所致。