Abstract

Field-effect graphene transistors (FGTs) based on single-layer graphene using the developed simplified combined self-consistent model are simulated. It is used to compare the results of calculating the current–voltage (I–V) characteristics of five devices with the same geometric parameters with different materials of the gate dielectric of the upper gate. The influence of the thickness of the dielectrics of the upper and lower gates on the transfer I–V characteristic of a dual-gate FGTs is analyzed

中文翻译：

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场效应石墨烯晶体管的栅极电介质对电流电压特性的影响

摘要

利用开发的简化组合自洽模型对基于单层石墨烯的场效应石墨烯晶体管（FGT）进行了仿真。它用于比较计算五个具有相同几何参数和上栅栅极电介质材料不同的器件的电流-电压（IV）特性的结果。分析了上下栅极电介质厚度对双栅极FGT的传输IV特性的影响