A cost-effective fluorination method for enhancing the performance of metal oxide thin-film transistors,Journal of the Society for Information Display

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A cost-effective fluorination method for enhancing the performance of metal oxide thin-film transistors
Journal of the Society for Information Display ( IF 1.7 ) Pub Date : 2021-04-12 , DOI: 10.1002/jsid.1013
Sunbin Deng ₁ , Shou‐Cheng Dong _{1,

2} , Rongsheng Chen _{1,

3} , Wei Zhong _{1,

3} , Guijun Li _{1,

4} , Meng Zhang _{1,

5} , Fion Sze Yan Yeung ₁ , Man Wong ₁ , Hoi‐Sing Kwok ₁

Affiliation

Fluorination is a common technique for enhancing the performance of metal oxide (MO) thin-film transistors (TFTs). However, it usually requires extra processing steps under harsh conditions and brings about a high thermal budget. This work reports a mild fluorination method for MO TFTs using a fluorinated polyimide (F-PI) in an industry-standard planarization (PLN) process. During the thermal curing of the F-PI, fluorine-containing fragments diffused into MO channels and significantly improved the electrical performance of MO-TFTs. Channel fluorination was observed in both bottom- and top-gated devices, exemplifying the effectiveness of this method. A 2.2-in., monochrome AMOLED prototype display was fabricated using the fluorinated MO TFTs. This method provides a mild and low-thermal-budget fluorination technique and is useful for the cost-effective production of active-matrix flat-panel display panels.

中文翻译：

一种提高金属氧化物薄膜晶体管性能的经济有效的氟化方法

氟化是增强金属氧化物（MO）薄膜晶体管（TFT）性能的常用技术。然而，它通常在苛刻的条件下需要额外的处理步骤，并带来高的热预算。这项工作报告了在工业标准平面化（PLN）工艺中使用氟化聚酰亚胺（F-PI）的MO TFT的温和氟化方法。在F-PI的热固化过程中，含氟碎片会扩散到MO通道中，从而显着提高了MO-TFT的电性能。在底部和顶部浇口设备中均观察到通道氟化，证明了该方法的有效性。使用氟化的MO TFT制造了一块2.2英寸的单色AMOLED原型显示器。

更新日期：2021-05-25

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