Abstract

The photoelectric interconnection of matrix photodetectors in the medium-wave IR range of 320 × 256 elements with a step of 30 μm and 640 × 512 elements with a step of 15 μm based on indium antimonide is investigated. The dependence of the crosstalk value on the thickness of a thinned InSb bulk structure was determined. The interrelation of the elements of matrix photodetectors based on epitaxial indium antimonide is significantly less than the interrelation based on bulk indium antimonide.

中文翻译：

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基于锑化铟的矩阵光电探测器的空间分辨率对光敏层厚度的依赖性

摘要

基于锑化铟，研究了矩阵光探测器在320×256元素（步长为30μm）和640×512元素（步长为15μm）的中波红外范围内的光电互连。确定了串扰值对减薄的InSb块状结构厚度的依赖性。基于外延锑化铟的矩阵光电探测器的元素之间的相互关系明显小于基于体相锑化铟的矩阵相互关系。