Abstract—

The admittance of MIS structures based on n(p)-Hg_1–xCd_xTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product of the differential resistance of the space charge region and area of the field electrode R_SCRA by creating near-surface graded-gap layers with an increased content of CdTe is investigated. It has been established that the creation of a graded-gap layer leads to an increase in the value of R_SCRA by a factor of 10–200 for MIS structures based on n-Hg_0.78Cd_0.22Te due to suppression of tunneling generation through deep levels and a decrease in the Shockley–Read current. MIS structures based on n-Hg_0.78Cd_0.22Te without a graded-gap layer grown on GaAs substrates have R_SCRA values that exceed 10 or more times the values of the same parameter for structures grown on Si substrates.

中文翻译：

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基于n-Hg 0.78 Cd 0.22 Te和近表面渐变隙层的MIS结构的差动电阻研究

摘要-

研究了通过分子束外延在Si和GaAs衬底上生长的n（p）-Hg _{1 -x} Cd _x Te（x = 0.21-0.23）形成的MIS结构的导纳。研究了通过形成具有增加的CdTe含量的近表面渐变间隙层来增加空间电荷区域和场电极R _SCR A的面积的差分电阻的乘积的值的可能性。已经确定，对于基于n -Hg _0.78的MIS结构，创建梯度间隙层会导致R _SCR A的值增加10-200倍。Cd _0.22 Te是由于抑制了穿过深层的隧穿产生以及肖克利-雷电流的减小所致。在GaAs衬底上生长的无梯度间隙层的基于n -Hg _0.78 Cd _0.22 Te的MIS结构的R _SCR A值超过在Si衬底上生长的结构的相同参数值的10倍或更多倍。