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Numerical Analysis of X-Ray Diffraction Reflection Spectra of AlGaAs/GaAs Superlattices Depending on Structural Parameters
Journal of Communications Technology and Electronics ( IF 0.4 ) Pub Date : 2021-04-13 , DOI: 10.1134/s1064226921030074
D. V. Ilinov , A. D. Shabrin , A. E. Goncharov , D. A. Pashkeev

Abstract

In this paper, we study the properties of X-ray diffraction reflection spectra of multilayer periodic AlGaAs/GaAs heterostructures depending on the thickness and composition of the layer material and number of periods. The number and intensity of additional diffraction maxima on the rocking curves are shown to increase with an increase in the layer thickness and number of periods. The layer composition does not affect the number of maxima but changes their angular position and the full width at half maximum. Numerical calculations were compared with experimental spectra measured for a heterostructure grown by molecular beam epitaxy and consisting of 50 periods in which the AlxGa1–xAs barrier had a composition of x ≈ 26.7% and a thickness of d ≈ 51.6 nm while the GaAs quantum well had a thickness of d ≈ 4.6 nm. The calculated parameters are found to be in good agreement with the technological data and the results of transmission electron microscope measurements.



中文翻译:

AlGaAs / GaAs超晶格的X射线衍射反射光谱的结构参数数值分析

摘要

在本文中,我们研究了多层周期性AlGaAs / GaAs异质结构的X射线衍射反射光谱,其性质取决于层材料的厚度和组成以及周期数。摇摆曲线上附加衍射最大值的数量和强度显示为随层厚度和周期数的增加而增加。层组成不影响最大值的数量,但会更改其角位置和一半的最大宽度。数值计算与用于异质结构测定通过分子束外延生长,并包括50个周期,其中所述Al实验谱进行了比较X1- X作为屏障具有的组成X ≈26.7%,厚度为d ≈51.6纳米,而GaAs量子阱的厚度为d ≈4.6纳米。发现计算出的参数与技术数据和透射电子显微镜的测量结果非常吻合。

更新日期:2021-04-13
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