Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is based on difference among the formation energies of acceptors in the InGaN quantum wells. A nice correlation of the model and experimental data helps to reveal origin of Zn impurity in InGaN quantum wells. Proposed methodology can be applied to different acceptor-like defects and shine light the upon enigma of high defect concentration in the bottom quantum wells grown atop the n-type buffer layer.

发现了来自未知来源的InGaN / GaN多量子阱（MQW）结构的锌污染。引入描述InGaN / GaN MQW结构中Zn受体杂质浓度分布的模型，并将其与测量值进行比较。该模型基于InGaN量子阱中受体形成能之间的差异。模型与实验数据的良好相关性有助于揭示InGaN量子阱中Zn杂质的来源。所提出的方法可以应用于不同的类似受体的缺陷，并在n型缓冲层上方生长的底部量子阱中高缺陷浓度的谜团时发出光芒。