In this paper, an RF front-end (RFFE) circuit consisting of a low noise amplifier (LNA) and a down-conversion mixer for vehicle-to-everything (V2X) applications in a 65-nm CMOS process is presented. V2X standard has a carrier frequency of 5.9GHz with 10 and 20MHz bandwidth options. The LNA topology of the RFFE is based on an inductively degenerated cascode common source differential approach. The mixer design uses a double-balanced topology with a charge injection method to enhance the linearity and noise figure performance. The RFFE design shows a single sideband integrated noise figure of 4.47dB with a total conversion gain of 28dB. The IIP3 is obtained as −17dBm with charge injection in the mixer which is an improvement of 5dB as compared to no charge injection. The design consumes a total current of 10.24mA from a 1.2-V supply. This work is the first CMOS RFFE design implemented for V2X applications.

中文翻译：

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包含用于 V2X 技术的电荷注入混合器的低功耗、高增益和高线性度 CMOS RF 前端设计

本文介绍了一种射频前端 (RFFE) 电路，该电路由低噪声放大器 (LNA) 和下变频混频器组成，适用于 65-nm CMOS 工艺中的车联网 (V2X) 应用。V2X 标准的载波频率为 5.910 和 20 的 GHzMHz 带宽选项。RFFE 的 LNA 拓扑基于电感退化级联共源差分方法。混频器设计采用双平衡拓扑和电荷注入方法来增强线性度和噪声系数性能。RFFE 设计显示出 4.47 的单边带集成噪声系数dB，总转换增益为 28D b。IIP3 获得为-17混频器中带有电荷注入的 dBm，提高了 5与无电荷注入相比的 dB。该设计消耗的总电流为 10.24mA 来自 1.2V 电源。这项工作是第一个为 V2X 应用实施的 CMOS RFFE 设计。