Herein, we report an emission wavelength control technique for self-assembled InAs quantum dots (QDs) grown via molecular beam epitaxy using an As₂ source (As₂-QDs). The As₂-QDs exhibited photoluminescence with a shorter center wavelength and larger bandwidth than those of the QDs grown using an As₄ source. In addition, the emission center wavelength could be controlled by adjusting the time between the growth and capping of the As₂-QDs. We utilized the multilayer stack of emission-wavelength-controlled As₂-QDs to fabricate an electrically-driven light source and demonstrated its broadband (approximately 130nm) emission in the 1–1.3μm wavelength range.

在此，我们报告了一种用于使用 As ₂源（As ₂ -QD）通过分子束外延生长的自组装 InAs 量子点（QD）的发射波长控制技术。与使用 As ₄源生长的 QD 相比，As ₂ -QD 表现出具有更短中心波长和更大带宽的光致发光。此外，发射中心波长可以通过调整 As ₂ -QD的生长和封顶之间的时间来控制。我们利用发射波长控制作为所述多层堆叠_2个-QDs以制造电驱动光源并证明在1-1.3其宽带（约130纳米）发射μ米的波长范围。