We report on terahertz (THz) emission from an InGaAs-based DC-current-driven dual-grating-gate high-electron-mobility transistor excited by photomixed dual continuous-wave-infrared (dual-CW-IR) laser irradiation. The difference frequency (δf) of the dual-CW-IR laser beams was set around the THz plasmon mode frequencies at different bias conditions. The radiation spectra from the device observed at 120K showed distinctive emissions beyond the black-body radiation, which were promoted by δf-dependent coherent plasmons. The results suggest the occurrence of plasmonic boom instability stimulated by the DC current flow in the 2D channel under pertinent DC bias voltages.

我们报告了基于 InGaAs 的直流电流驱动双光栅栅极高电子迁移率晶体管的太赫兹 (THz) 发射，该晶体管由光混合双连续波红外 (双 CW-IR) 激光照射激发。在不同偏置条件下，双 CW-IR 激光束的差频 ( δf ) 设置在太赫兹等离子体模式频率附近。在 120K 观察到的装置的辐射光谱显示出黑体辐射之外的独特发射，这是由依赖于δf 的相干等离子体促进的。结果表明，在相关直流偏置电压下，二维通道中的直流电流会激发等离子激振不稳定性。