Doped-ZnS nanoparticles (NPs) with various trivalent elements ions (Sb³⁺, In³⁺, and Bi³⁺) were synthesized using the sonochemical method. X-ray diffraction patterns proved the formation of the ZnS cubic phase without any phase separation with the doping process. The dependence of the crystallite size and the internal micro-strain on the dopant type was demonstrated. Optical absorption spectra of doped ZnS NPs revealed a decrease in the optical band gap due to the formation of extended defect states below the conduction band. Photoluminescence spectra of the doped samples revealed the enhancement of visible light emission intensity compared with the as-prepared ZnS NPs. The AC electrical properties of the trivalent elements doped ZnS NPs were studied at room temperature in the frequency range from 2 kHz to 1 MHz, where In-doped ZnS NPs had the lowest dielectric constant and largest conductivity compared with the other samples.

具有各种三价元素离子（Sb ³⁺，In ³⁺和Bi ³⁺使用声化学方法合成）。X射线衍射图谱证实了ZnS立方相的形成，并且在掺杂过程中没有任何相分离。证明了晶粒尺寸和内部微应变对掺杂剂类型的依赖性。掺杂的ZnS NPs的光吸收光谱表明，由于在导带以下形成了扩展的缺陷态，导致了光学带隙的减小。与所制备的ZnS NPs相比，掺杂样品的光致发光光谱显示可见光发射强度的增强。在室温下在2 kHz至1 MHz的频率范围内研究了掺杂三价元素的ZnS NPs的交流电性能，其中In掺杂的ZnS NPs与其他样品相比具有最低的介电常数和最大的电导率。