Short-wavelength infrared (SWIR) sensors have attracted keen attention due to the increasing necessity in a variety of scientific and industrial applications, including biomedical and information technology fields. Because conventional SWIR sensors are made of inorganic materials with rigid and brittle characteristics, organic materials with a discrete SWIR absorption are required for flexible SWIR sensors in the flexible electronics era. Here, we demonstrate that a polytriarylamine, poly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine] (PolyTPD), can absorb almost full range of SWIR wavelength (λ = 1000–3200 nm) after 48 h doping with tris(pentafluorophenyl)borane (BCF). The spectroscopic characterization disclosed that an electron transfer from PolyTPD to BCF created a new low energy level (gap) state leading to the SWIR absorption in the BCF-doped PolyTPD complexes. Organic phototransistors (OPTRs) with the BCF-doped PolyTPD films as a gate-sensing layer could detect the SWIR light with a reasonable photoresponsivity of ~538 mA W⁻¹ (λ = 1500 nm), ~541 mA W⁻¹ (λ = 2000 nm), and ~222 mA W⁻¹ (λ = 3000 nm). The present breakthrough SWIR-OPTR technology can pave a way for further advances in SWIR-absorbing organic materials and flexible SWIR sensors.

由于在包括生物医学和信息技术领域在内的各种科学和工业应用中的日益增长的需求，短波红外（SWIR）传感器引起了人们的极大关注。由于传统的SWIR传感器是由具有刚性和脆性的无机材料制成的，因此在柔性电子时代，柔性SWIR传感器需要具有离散SWIR吸收的有机材料。在这里，我们证明了聚三芳基胺，聚[N，N'-双（4-丁基苯基）-N，N'-双（苯基）联苯胺]（PolyTPD），可以吸收几乎整个SWIR波长范围（λ 三（五氟苯基）硼烷（BCF）掺杂48 h后= = 1000–3200 nm）。光谱表征表明，从PolyTPD到BCF的电子转移产生了新的低能级（能隙）状态，导致BCF掺杂的PolyTPD络合物中的SWIR吸收。带有BCF掺杂的PolyTPD膜作为栅极感应层的有机光电晶体管（OPTR）可以以大约538 mA W ^-1（λ  = 1500 nm），〜541 mA W ^-1（λ  = 2000 nm）和〜222 mA W ^-1（λ  = 3000 nm）。目前突破性的SWIR-OPTR技术可以为SWIR吸收有机材料和柔性SWIR传感器的进一步发展铺平道路。