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Microstructure and Electrical Properties of the DC-sputtered Al 1−x Mo x Alloys
Brazilian Journal of Physics ( IF 1.5 ) Pub Date : 2021-04-11 , DOI: 10.1007/s13538-021-00896-6
Asma Mosbah , Abdelhamid Saker , Djamel Eddine Mekki , Bouguera Bouzabata

Al1−xMox alloy deposits have been obtained by magnetron co-sputtering upon glass substrates in order to study their crystallographic structure and electrical properties. Layer thickness is about 3 µm. The microstructural analysis has been performed by X-ray diffraction and by transmission electron microscopy. The electrical characteristics were measured by the Van der Pauw method. The Al–Mo system deposit consists of two concomitant phases in varying concentrations when the molybdenum content increases. Regardless of the Mo concentration, the deposits are two-phase whom the degree of crystallinity evolves in opposite directions. The electrical conductivity remains substantially stable at low values regardless of the Mo concentration. Therefore, these deposits will have important uses, in particular in practical applications in modern technology fields as a diffusion barrier. The electrical conductivity values increase after annealing at the temperature of 773 K for 1h. The Al5Mo stable phase, expected by the equilibrium diagram, appears for each deposit in addition to other stable phases.



中文翻译:

直流溅射Al 1-x Mo x合金的组织和电性能

Al 1- x Mo x为了研究其晶体结构和电性能,已经通过磁控共溅射在玻璃基板上获得了合金沉积物。层厚度为约3μm。显微结构分析是通过X射线衍射和透射电子显微镜进行的。电特性通过Van der Pauw方法测量。当钼含量增加时,Al-Mo系统沉积物由浓度不同的两个伴随相组成。无论Mo浓度如何,沉积物都是两相的,其结晶度沿相反的方向发展。不管Mo浓度如何,电导率在低值下都基本保持稳定。因此,这些沉积物将具有重要用途,特别是在现代技术领域的实际应用中作为扩散屏障。在773 K的温度下退火1小时后,电导率值增加。铝平衡图所预期的5 Mo稳定相,除了其他稳定相之外,还针对每种沉积物出现。

更新日期:2021-04-11
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