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Hot carrier dynamics of photoinjected plasma in indium nitride
The European Physical Journal B ( IF 1.6 ) Pub Date : 2021-04-11 , DOI: 10.1140/epjb/s10051-021-00096-w
Clóves G. Rodrigues

Abstract

A theoretical study using the nonequilibrium statistical operator method is performed to investigate the ultrafast transient transport properties of photoexcited carriers in wurtzite InN subjected to electric fields up to 20 kV/cm. The evolution toward the steady state of the drift velocity of carriers (electrons and holes) and nonequilibrium temperature (carriers and phonons) is determined. The transient regime occurs at the subpicosecond scale with maxima and minima in the hole and electron drift velocities.

Graphic abstract



中文翻译:

氮化铟层中光注入等离子体的热载流子动力学

摘要

进行了使用非平衡统计算子方法的理论研究,以研究在电场高达20 kV / cm的情况下,纤锌矿InN中光激发载流子的超快瞬态传输特性。确定了载流子(电子和空穴)和非平衡温度(载流子和声子)的漂移速度向稳态的演变。瞬态状态发生在亚皮秒级,空穴和电子漂移速度达到最大值和最小值。

图形摘要

更新日期:2021-04-11
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