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Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2
Science ( IF 56.9 ) Pub Date : 2021-04-09 , DOI: 10.1126/science.abf5825
Xiaolong Xu 1, 2 , Yu Pan 1 , Shuai Liu 1 , Bo Han 3, 4 , Pingfan Gu 1 , Siheng Li 4 , Wanjin Xu 1 , Yuxuan Peng 1 , Zheng Han 5, 6 , Ji Chen 1 , Peng Gao 2, 3, 4 , Yu Ye 1, 2, 7
Affiliation  

The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.



中文翻译:

范德华半导体2H MoTe2大面积单晶膜的2D晶种外延

将二维(2D)范德华半导体集成到硅电子技术中将需要生产大规模,均匀且高度结晶的薄膜。我们报告了在非晶绝缘衬底上合成晶片级单晶2H二碲化钼(MoTe 2)半导体的途径。故意植入的单个晶种触发了通过碲化的平面2D外延生长。所得的单晶膜以优异的均匀性完全覆盖了2.5厘米的晶片。2H MoTe 2 2D单晶膜可以将其自身用作模板,以垂直方式进一步快速外延。使用准备好的2H MoTe 2制成的晶体管阵列 单晶具有较高的电性能,具有出色的均匀性和100%的器件良率。

更新日期:2021-04-09
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