We report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO) nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of dual-wavelength photodetectors with the hybrid configuration of these materials. For the hybrid nanostructures, ZnO nanotubes and InAs nanorods were grown vertically on the top and bottom surfaces of the graphene films by metal-organic vapor-phase epitaxy and molecular beam epitaxy, respectively. The structural, optical, and electrical characteristics of the hybrid nanostructures were investigated using transmission electron microscopy, spectral photoresponse analysis, and current–voltage measurements. Furthermore, the hybrid nanostructures were used to fabricate dual-wavelength photodetectors sensitive to both ultraviolet and mid-infrared wavelengths.

我们报告了使用多层石墨烯膜作为悬浮衬底的砷化铟（InAs）纳米棒和氧化锌（ZnO）纳米管的单片集成，以及具有这些材料的混合配置的双波长光电探测器的制造。对于杂化纳米结构，分别通过金属-有机气相外延和分子束外延在石墨烯膜的顶部和底部表面上垂直生长ZnO纳米管和InAs纳米棒。使用透射电子显微镜，光谱光响应分析和电流-电压测量研究了杂化纳米结构的结构，光学和电学特性。此外，混合纳米结构用于制造对紫外和中红外波长均敏感的双波长光电探测器。