In recent years, two-dimensional transition metal dichalcogenides (TMDs) have been attracted promising candidates for imminent electrical and optical device applications owing to their remarkable properties and unique structures. In this study, we report the optical and electrical characteristics of the newest member of the TMD family, i.e. monolayer of rhenium disulfide (ReS₂) field effect transistor on a SiO₂/Si substrate developed using the chemical vapor deposition technique. The quality of the as-grown monolayer of ReS₂ was evaluated through Raman spectroscopy, whereas the surface elemental composition was analyzed thorough X-ray photoelectron spectroscopy. The optical properties of this monolayer TMD were analyzed using photoluminescence spectroscopy, and the contact resistance between the as-grown semiconducting monolayer and the metal electrodes was examined using the transmission line modeling method. Ti/Au electrodes form an excellent ohmic contact with the monolayers of the ReS₂ film. The electron mobility of the monolayer ReS₂ FETs fabricated through transmission line patterning was investigated at room temperature (300 K) and found to be \(2.91\hspace{0.17em}\times \hspace{0.17em}\)10^–2 cm² V⁻¹ s⁻¹ whereas the on/off ratio of the device was 9.8 × 10².

近年来，由于其卓越的性能和独特的结构，二维过渡金属二硫化碳（TMD）吸引了有前途的电气和光学设备应用的有希望的候选者。在这项研究中，我们报告了TMD系列最新成员的光学和电学特性，即使用化学气相沉积技术在SiO ₂ / Si衬底上形成的二硫化rh（ReS ₂）场效应晶体管单层。ReS _2的单层生长质量通过拉曼光谱法评价表面活性剂，而通过X射线光电子能谱分析表面元素组成。使用光致发光光谱法分析该单层TMD的光学性质，并使用传输线建模方法检查生长的半导体单层与金属电极之间的接触电阻。Ti / Au电极与ReS ₂膜的单层形成极好的欧姆接触。在室温（300 K）下研究了通过传输线构图制造的单层ReS ₂ FET的电子迁移率，发现其为\（2.91 \ hspace {0.17em} \ times \ hspace {0.17em} \） 10 ^–2  cm ²  V ^-1 s ^-1，而器件的开/关比是9.8×10 ²。