Abstract

The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spectroscopy. The PL line of the formed array of island lies in the range of 950–1000 nm at room temperature. The PL studies in the temperature range of 78–300 K indicate significant inhomogeneity of the island array, existence of nonradiative recombination centers, and transport of carriers between islands. The photoluminescence excitation spectra exhibit a line related to the absorption in the residual two-dimensional InGaPAs layer. Annealing of the structures allowed us to increase the PL intensity at room temperature up to 300% with a slight short-wavelength shift of the island emission line and to improve the homogeneity inside the island array.

中文翻译：

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第五族元素取代形成的三维InGaP（As）岛的光学性质

摘要

通过光致发光（PL）光谱研究了在外延生长期间直接沉积在GaAs上的InGaPAs层中通过砷置换磷而形成的三维量子尺寸InGaPAs岛的光学特性。在室温下，形成的岛状阵列的PL线在950–1000 nm的范围内。在78–300 K的温度范围内的PL研究表明，岛阵列存在明显的不均匀性，存在非辐射重组中心，并且岛之间的载流子传输。光致发光激发光谱显示出与残留二维InGaPAs层中的吸收有关的线。