Rotational near-field photolithography (RNFP) has a great potential for nanostructure fabrication. However, photoresist may be transferred between head and disk resulting in failure of the photolithography process. Two models of photoresist transfer from a rotating disk to a photolithography head were developed using molecular dynamics simulation. The simulation results revealed that photoresist transfer is mainly caused by the strong attraction between the hydrogen atoms in the photoresist and the chromium of the head. When the distance between disk and head is less than the critical flying height, the transfer amount increases with the decrease of rotational speed and flying height. Maintaining the flying height above the critical value is the most effective way to ensure the non-transfer of photoresist.

旋转近场光刻（RNFP）在纳米结构制造方面具有巨大潜力。但是，光致抗蚀剂可能在磁头和磁盘之间转移，从而导致光刻工艺失败。使用分子动力学模拟开发了两种光刻胶从旋转盘转移到光刻头的模型。仿真结果表明，光致抗蚀剂的转移主要是由于光致抗蚀剂中的氢原子与头部的铬之间的强烈吸引力所致。当磁盘和磁头之间的距离小于临界飞行高度时，转移量随着旋转速度和飞行高度的降低而增加。将浮动高度保持在临界值以上是确保光刻胶不转移的最有效方法。