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A Ka-Band GaN-on-Si MMIC Analog Vectorial Modulator and Its Broadband Calibration Procedure
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2021-02-08 , DOI: 10.1109/lmwc.2021.3054463
G. Collodi 1 , M. Passafiume 1 , T. Bilotta 1 , A. Cidronali 1
Affiliation  

This letter introduces for the first time a fully integrated analog vectorial modulator (VM) in gallium nitride on silicon (GaN-on-Si) monolithic microwave-integrated circuit (MMIC) technology, operating in $Ka$ -band, and an analytical calibration technique suitable for VM. An extensive characterization of the prototype, with both static and dynamic modulating signals, validates both the design and the calibration technique. The VM is capable to produce corrected constellations with accuracy of 0.06 dB and 0.28° root mean square, respectively, for amplitude and phase, across the 35–40 GHz bandwidth. Furthermore, it is capable to generate single-side modulated signal with undesired sideband suppression in excess of 47 dBc.

中文翻译:

一种 K a波段GaN-on-Si MMIC模拟矢量调制器及其宽带校准程序

这封信首次介绍了硅氮化镓(GaN-on-Si)单片微波集成电路(MMIC)技术中的完全集成模拟矢量调制器(VM),该技术在 $ Ka $ 带,以及适用于VM的分析校准技术。利用静态和动态调制信号对原型进行广泛的表征,可以验证设计和校准技术。VM能够在35–40 GHz带宽上产生幅度和相位分别为0.06 dB和0.28°均方根精度的校正星座图。此外,它能够产生单边调制信号,并具有超过47 dBc的不希望的边带抑制。
更新日期:2021-04-09
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