A gas-mediated fabrication of centimeter-scale two-dimensional (2D) semiconductors and ultraviolet photodetector by a liquid metal-based printing was reported. Various large-scale 2D materials (Ga₂O₃, In₂O₃, SnO) were demonstrated to be directly printed at ambient air on different substrates. Such printing represents a generic, fast, clean, and scalable technique to quickly manufacture 2D semiconductors. The electrical properties were explored to quantify the printed 2D films, which were somewhat deficient in previous studies. In particular, to explore and facilitate the advantages of this 2D semiconductor in functional electronic applications, strategies for realizing fully printed Ga₂O₃/Si heterojunction photodetector via low-temperature and low-cost processes were developed. The device exhibits excellent sensibility and rapid photoresponse times. This work offers feasible way to develop high-performance ultraviolet photodetector for mass production. It also suggests a promising direction for making large-scale 2D photoelectronic and electronic systems and is expected to be extensively useful in the coming time.

据报道，通过液态金属基印刷进行了气体介导的厘米级二维（2D）半导体和紫外光电探测器的制造。各种大型2D材料（Ga ₂ O ₃，In ₂ O ₃，SnO）被证明可以在环境空气中直接印刷在不同的基材上。这样的打印代表了一种快速制造2D半导体的通用，快速，清洁和可扩展的技术。探索了电性能以量化印刷的2D胶片，这在以前的研究中有些不足。尤其是，为了探索和促进这种2D半导体在功能电子应用中的优势，实现完全印刷的Ga ₂ O _3的策略通过低温，低成本工艺开发了/ Si异质结光电探测器。该设备具有出色的灵敏度和快速的光响应时间。这项工作为开发用于大规模生产的高性能紫外光电检测器提供了可行的方法。它还为制造大规模2D光电和电子系统提出了一个有希望的方向，并有望在未来的时间内广泛使用。