Semiconductor deposition on magnetron's cathode surface using different materials such as gallium nitride (GaN) and silicon carbide (SiC) semiconductors is conducted to grow approximately 80, 100 and 120 nm plasma layers. The cathode is then used to generate high frequency and low-power microwave for further comparison and analysis with the conventional magnetron operation. Parameter of analysis to identify the efficiency includes electron drift velocity, harmonic order, total harmonic distortion, low harmonic distortion, and spectrum observation. The sputtered cathode of the magnetron is used to generate a low-power microwave observing a generator efficiency up to 93 and 88% for GaN and SiC materials, respectively, compared to the conventional material, which observes 37% of efficiency at 2450 MHz, 5 W. Also reported is the quality of semiconductor sputtering on the magnetron cathode, which was manipulated by the deposition period, temperature, and plasma layer growth thickness.

中文翻译：

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使用 GaN 和 SiC 半导体进行调制微波功率传输的高效率、低噪声溅射磁控管阴极研究

使用不同材料（例如氮化镓 (GaN) 和碳化硅 (SiC) 半导体）在磁控管的阴极表面上进行半导体沉积，以生长大约 80、100 和 120 nm 的等离子体层。然后使用阴极产生高频和低功率微波，以便与传统的磁控管操作进行进一步比较和分析。确定效率的分析参数包括电子漂移速度、谐波次数、总谐波失真、低谐波失真和光谱观察。磁控管的溅射阴极用于产生低功率微波，GaN 和 SiC 材料的发生器效率分别高达 93% 和 88%，而传统材料在 2450 MHz 时的效率为 37%，5 W。