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Dependence of the tunneling conductance on the barrier thickness: effects of the complex-band structure
Journal of the Korean Physical Society ( IF 0.8 ) Pub Date : 2021-04-07 , DOI: 10.1007/s40042-021-00144-9
B. C. Lee

The dependence of tunneling conductance on the barrier thickness was investigated theoretically by using a tight-binding model. In order to calculate the tunneling conductance, full-band calculations were carried out with a model tunnel junction. In addition to an exponential decay, it was shown that the tunneling conductance may oscillate strongly as a function of the barrier thickness due to the complex-band structure of the barrier. The relation between the complex Fermi surface of the barrier and the oscillation period of the tunneling conductance was examined. The oscillation of the tunnel conductance is affected by the matching between the metal and the barrier bands.



中文翻译:

隧道电导对势垒厚度的依赖性:复带结构的影响

理论上,使用紧密结合模型研究了隧穿电导对势垒厚度的依赖性。为了计算隧道电导,使用模型隧道结进行了全频带计算。除了指数衰减之外,还表明由于势垒的复带结构,隧穿电导可能作为势垒厚度的函数强烈振荡。研究了势垒的费米复合表面与隧道电导的振荡周期之间的关系。隧道电导的振荡受金属与势垒带之间匹配的影响。

更新日期:2021-04-08
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