We obtain strong room-temperature electroluminescence (EL) from a Ge epitaxially grown on a Si. The epitaxial Ge is in situ doped with Boron and Phosphorous by low-temperature growth, allowing for precisely controlled p-i-n structures. Also Phosphorus delta-doping is performed at the surface, resulting in low-resistivity Ohmic contacts. Vertical-type mesa-defined diodes are fabricated and an excellent rectifying property with an on/off ratio over 10⁵ is obtained, leading to the strong EL. It is remarkable that the post-growth-annealing drastically enhances the EL intensity, indicating that the Ge-on-Si is a promising high-efficiency light source on the Si platform.

我们从在 Si 上外延生长的 Ge 获得强室温电致发光 (EL)。外延锗通过低温生长原位掺杂硼和磷，允许精确控制引脚结构。此外，在表面进行磷 delta 掺杂，从而产生低电阻率的欧姆接触。制作了垂直型台面限定二极管，并获得了开/关比超过10 ⁵的优良整流特性，从而产生了强EL。值得注意的是，后生长退火显着提高了 EL 强度，表明 Ge-on-Si 是 Si 平台上一种很有前途的高效光源。