Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realize high-quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon microring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to ${10}^5$. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.

中文翻译：

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低损耗硅微环谐振器中的超浅结电极

为了充分进行电气控制，需要使用与设备有效区域非常接近的电极。将这样的电极集成到光学设备中可能是具有挑战性的，因为必须保持低的光学损耗才能实现高质量的操作。在这里，我们证明有可能将金属浅磷掺杂层放置在可以在低温下起作用的硅微环腔中。我们验证了浅掺杂层会影响局部折射率，同时产生最小的损耗，且品质因数最高${10}^5$。该演示打开了将电子设备（例如单电子晶体管）集成到同一材料平台上的光路的途径。