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Ferroelectric Phase Content in 7 nm Hf(1−x)ZrxO2 Thin Films Determined by X-Ray-Based Methods
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-04-07 , DOI: 10.1002/pssa.202100024
Vineetha Mukundan 1 , Steven Consiglio 2 , Dina H. Triyoso 2 , Kandabara Tapily 2 , Martin E. McBriarty 3 , Sandra Schujman 4 , Karsten Beckmann 4 , Jubin Hazra 1 , Vidya Kaushik 4 , Nathaniel Cady 1 , Robert D. Clark 2 , Gert J. Leusink 2 , Alain C. Diebold 1
Affiliation  

The recent discovery of ferroelectric behavior in hafnia-based dielectrics attributed to the formation of noncentrosymmetric orthorhombic phase has opened up potential uses in numerous applications ranging from ferroelectric field effect transistors to pyroelectric energy harvesters. Herein, the relative amounts of ferroelectric orthorhombic phase (space group Pca21) in 7 nm-thick hafnia–zirconia (HZO) films of three compositions (Hf0.2Zr0.8O2, Hf0.5Zr0.5O2, and Hf0.8Zr0.2O2) are reported. The ferroelectric behavior in these ultrathin HZO films prepared by atomic layer deposition (ALD) in metal–insulator–metal (MIM) stacks is verified by polarization measurements. Using grazing incidence X-ray diffraction (GIXRD) and grazing incidence-extended X-ray absorption fine structure spectroscopy (GI-EXAFS), the relative phase percentages of three key phases (monoclinic—P21/c, orthorhombic—Pca21, and tetragonal—P42/nmc) are assessed. Among these compositions, Hf0.5Zr0.5O2 is determined to have the highest amount of the ferroelectric phase. The monoclinic phase is found to be dominant for Hf0.8Zr0.2O2, whereas the tetragonal phase is found to be dominant for Hf0.2Zr0.8O2. Independent GI-EXAFS measurements of Hf and Zr suggest that there is no significant segregation of either oxide into a particular crystal phase. Strong agreement between the measurement methods reveals the structure–property function correlation in these ultrathin hafnia–zirconia films with greater certainty than previously achieved.

中文翻译:

X射线方法测定的7 nm Hf(1-x)ZrxO2薄膜中的铁电相含量

由于基于非中心对称正交晶相的形成,在基于氧化ha的电介质中铁电行为的最新发现为从铁电场效应晶体管到热电能量收集器的许多应用打开了潜在的用途。此处,三种成分(Hf 0.2 Zr 0.8 O 2,Hf 0.5 Zr 0.5 O 2和Hf 0.8 Zr 0.2)的7 nm厚氧化锆-氧化锆(HZO)膜中的铁电正交相(空间群Pca2 1)的相对量Ø 2)的报告。这些超薄HZO膜中的铁电行为通过极化测量在金属-绝缘体-金属(MIM)叠层中通过原子层沉积(ALD)制备而成。使用掠入射X射线衍射(GIXRD)和掠入射扩展X射线吸收精细结构光谱(GI-EXAFS),三个关键相(单斜晶系-P2 1 / c,正交晶系-Pca2 1和评估四边形-P4 2 / nmc)。在这些组成中,Hf 0.5 Zr 0.5 O 2被确定为具有最大量的铁电相。发现单斜晶相占主导地位的Hf 0.8 Zr 0.2 O2,而四方相被发现是Hf 0.2 Zr 0.8 O 2的主导。Hf和Zr的独立GI-EXAFS测量表明,两种氧化物都没有显着偏析到特定的晶相中。测量方法之间的强烈一致性揭示了这些超薄氧化锆-氧化锆薄膜的结构-性能函数相关性,其确定性比以前更高。
更新日期:2021-05-19
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