This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up to $500~\mu \text{m}$ -deep vias. Full conformality of Al sputtering was made possible by shaping the vias with a tailored hourglass profile, which allowed a metallic layer as thick as 430 nm to be deposited in the center of the vias. Single-via electric resistance as low as 160 $\text{m}\Omega $ at room temperature and superconductivity at 1.27 K were measured by a three-dimensional (3D) cross-bridge Kelvin resistor structure. This work establishes a CMOS-compatible fabrication process suitable for arrays of superconducting TSVs and 3D integration of superconducting silicon-based devices. [2020-0354]

中文翻译：

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高度共形的溅射硅通孔，具有尖锐的超导过渡

本文介绍了具有超过1 K的尖锐超导过渡的铝涂层超导硅通孔（TSV）的微制造和电特性。 Al，并在此处进行了演示 $ 500〜\ mu \ text {m} $ -深通孔。通过以定制的沙漏轮廓对通孔进行整形，可以实现Al溅射的完全保形，从而可以在通孔的中心沉积厚度为430 nm的金属层。单通电阻低至160 $ \ text {m} \ Omega $ 在室温下，通过三维（3D）跨桥开尔文电阻器结构测量了1.27 K的超导性。这项工作建立了适用于超导TSV阵列和超导硅基器件的3D集成的CMOS兼容制造工艺。[2020-0354]