This article proposes a novel inverted-E topology for the design of phase shifters and multibit phase shifters. The novel phase shifter consists of a $50~\Omega $ main transmission line (MTL) symmetrically loaded with equally spaced three open-/short-circuited stubs via P-I-N switching diodes. The stubs provide the needed susceptances to achieve a phase shift with large value range. Thanks to the design flexibility of the topology, 2 ^N -1 sets of stubs can share the same MTL, providing $2^{n}$ phase states of an N-bit phase shifter. Design theory and performance analysis of the design variables are presented, followed by the analysis and simulation of four 22.5°, 45°, 90°, and 180° phase shifters. For validation and comparison, two typical 45° and 90° phase shifters and a 3-bit phase shifter, providing eight distinct phase states, have been fabricated and measured. The measured results show good agreement with analysis and simulation. In comparison to its traditional counterparts, the novel design yields a highly compact phase shifter because the separation between the loading elements on the MTL can be less than quarter wavelength, whereas low insertion loss is achieved because the diodes are loaded to the branches. In addition, multibit phase shifter in single unit can be realized with much shorter length and lower insertion loss.

中文翻译：

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基于反相E拓扑的紧凑型低损耗移相器和多位移相器

本文为移相器和多位移相器的设计提出了一种新颖的反向E拓扑。新型移相器包括一个 $ 50〜\ Omega $ 主传输线（MTL）通过PIN开关二极管对称地负载有相等间隔的三个开路/短路支线。存根提供所需的电纳，以实现较大的数值范围内的相移。由于拓扑的设计灵活性，所以2 ^N -1套存根可以共享同一MTL，从而提供 $ 2 ^ {n} $ N位移相器的相位状态。介绍了设计变量的设计原理和性能分析，然后对四个22.5°，45°，90°和180°移相器进行了分析和仿真。为了进行验证和比较，已经制造并测量了两个典型的45°和90°相移器以及一个提供8种不同相态的3位移相器。测量结果与分析和仿真结果吻合良好。与传统的同类产品相比，该新颖的设计可产生高度紧凑的移相器，因为MTL上负载元件之间的间隔可以小于四分之一波长，而由于二极管被负载至分支，因此实现了低插入损耗。另外，可以以更短的长度和更低的插入损耗来实现单个单元中的多位移相器。