A broadband SiGe power amplifier (PA) with double gain peaks for 5G applications is presented. The differential structure is widely adopted in millimeter-wave circuit design to decrease the impact of the source parasitic inductance that is induced by the bonding wires. Since differential PA results in a higher impedance transformation ratio of the matching network, differential PAs generally have narrower bandwidth than single-ended PAs. Through the bandwidth analysis of the matching network, the transformer used for interstage matching is elaborately designed to ease gain fluctuations. By controlling the stationary points of impedance transformation, the maximum available gain characteristic of a transistor, which decreases with increasing frequency, can be compensated. The gain curve of PA, thus, has double gain peaks within operational frequencies to make its frequency responses as flat as possible. The proposed PA for the frequency band from 27 to 37 GHz is fabricated in a standard 130-nm SiGe BiCMOS process, which occupies 0.36 mm ² . Under the 2.5-V voltage supply, the SiGe PA exhibited a power gain of 33.5 dB and output power of 21.3 dBm with 24% power-added efficiency at 31 GHz. It achieves a 34% 3-dB small-signal $S_{21}$ bandwidth from 27.3 to 38.5 GHz.

中文翻译：

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基于阻抗变换平稳点控制的双增益SiGe功率放大器

提出了针对5G应用具有双倍增益峰值的宽带SiGe功率放大器（PA）。毫米波电路设计中广泛采用了差分结构，以减少键合线引起的源极寄生电感的影响。由于差分PA会导致匹配网络的阻抗转换比更高，因此差分PA通常比单端PA具有更窄的带宽。通过匹配网络的带宽分析，精心设计了用于级间匹配的变压器，以缓解增益波动。通过控制阻抗变换的固定点，可以补偿随频率增加而降低的晶体管的最大可用增益特性。因此，PA的增益曲线 在工作频率范围内具有双倍的增益峰值，以使其频率响应尽可能平坦。拟议的针对27至37 GHz频带的功率放大器采用标准的130 nm SiGe BiCMOS工艺制造，占地0.36 mm ² 。在2.5V电压电源下，SiGe PA的功率增益为33.5 dB，输出功率为21.3 dBm，在31 GHz时的功率附加效率为24％。它实现了34％的3-dB小信号 $ S_ {21} $ 带宽从27.3到38.5 GHz。