This article presents the design and characterization of a real-time frequency-compensated power detector (PD), based on NMOS transistor, integrated in SiGe 55-nm BiCMOS technology from STMicroelectronics, and dedicated to on-chip power detection in the G-band frequencies. An innovative simple circuit (named attenuator) is designed in order to compensate the variation of the voltage sensitivity value with frequency, which is established by exhibiting lower attenuation (smaller real part impedance) at higher frequencies. As a result, the measured sensitivity value is compensated with a small variation (1800 V/W±10%) over the frequency band (140-220) GHz. To the best of the authors’ knowledge, this detector is the first design which proposes a real-time frequency compensation at such high- and large-frequency bands. The attenuator was also designed to exhibit an inductive impedance (in the G-band) in order to compensate the capacitive effect of the NMOS, which helps to use smaller NMOS size and, therefore, obtain a higher sensitivity value. Compared to recent works, our detector exhibits a performance belong the current state-of-the-art with a very low noise equivalent power (NEP) value 4.56 pW/ $\surd $ Hz and a relatively high voltage sensitivity value.

中文翻译：

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（140–220）GHz频率补偿功率检测器的设计与表征

本文介绍了一种基于NMOS晶体管的实时频率补偿功率检测器（PD）的设计和特性，该功率检测器集成在意法半导体的SiGe 55-nm BiCMOS技术中，专门用于G波段的片上功率检测频率。为了补偿电压灵敏度值随频率的变化，设计了一种创新的简单电路（称为衰减器），这是通过在较高频率下表现出较低的衰减（较小的实部阻抗）来建立的。结果，在频带（140-220）GHz上以很小的变化（1800 V / W±10％）补偿了测得的灵敏度值。据作者所知，该检波器是第一个提出在这样的高频带和大频带上进行实时频率补偿的设计。衰减器还设计为具有电感性阻抗（在G波段），以补偿NMOS的电容效应，这有助于使用较小的NMOS尺寸，从而获得较高的灵敏度值。与最近的工作相比，我们的探测器展现出的性能是当前最新技术，具有非常低的噪声等效功率（NEP）值4.56 pW / $ \ surd $ Hz和相对较高的电压灵敏度值。