Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many high-mobility n-type oxide semiconductors are known, wide-bandgap p-type oxides have carrier mobilities that are one to two orders of magnitude lower due to strong carrier localization near their valence band edge. Here, we report the growth of bilayer beta tellurium dioxide (β-TeO₂), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the surface oxidation of a eutectic mixture of tellurium and selenium. The isolated β-TeO₂ nanosheets are transparent and have a direct bandgap of 3.7 eV. Field-effect transistors based on the nanosheets exhibit p-type switching with an on/off ratio exceeding 10⁶ and a field-effect hole mobility of up to 232 cm² V⁻¹ s⁻¹ at room temperature. A low effective mass of 0.51 was observed for holes, and the carrier mobility reached 6,000 cm² V⁻¹ s⁻¹ on cooling to −50 °C.

宽带隙氧化物半导体对于开发高速和节能的透明电子产品至关重要。然而，虽然许多高迁移率 n 型氧化物半导体是已知的，但宽带隙 p 型氧化物的载流子迁移率由于其价带边缘附近的强载流子局部化而具有低一到两个数量级的载流子迁移率。在这里，我们报告了双层 β 二氧化碲 (β-TeO ₂ ) 的生长，它最近在理论上被提出作为高迁移率 p 型半导体，通过碲和硒的共晶混合物的表面氧化。分离的β-TeO ₂纳米片是透明的并且具有3.7 eV的直接带隙。基于纳米片的场效应晶体管表现出 p 型开关，开/关比超过 10⁶和在室温下高达 232 cm ²  V ^-1  s ^-1的场效应空穴迁移率。观察到空穴的有效质量低至 0.51，冷却至 -50 °C 时载流子迁移率达到 6,000 cm ²  V ^-1  s ^-1。