The improvement achieved in the reverse recovery characteristics of an SiC superjunction metal–oxide–semiconductor field-effect transistor (MOSFET) by embedding a p-type Schottky contact at the drain terminal and removing the \({N}^{++}\) substrate is presented. The carrier injection into the drain terminal during the reverse recovery phase is drastically reduced in the proposed device due to the Schottky barrier, thereby eliminating the need for an external free-wheeling diode. The calibrated two-dimensional (2D) numerical simulations using Synopsys technology computer-aided design (TCAD) software reveal an improvement in (i) the reverse recovery charge by 70%, (ii) the switching loss due to reverse recovery by 70%, and (iii) Baliga’s figure of merit (FOM) by 4.5% compared with the device without the Schottky contact. Furthermore, the variation in the device and circuit characteristics is analyzed from 300 to 500 K using nonisothermal simulations.

通过在漏极端子处嵌入p型肖特基接触并去除\（{N} ^ {++} \ ）呈现底物。在所提出的装置中，由于肖特基势垒，在反向恢复阶段期间向漏极端子中的载流子注入被大大减少，从而消除了对外部续流二极管的需要。使用Synopsys技术计算机辅助设计（TCAD）软件进行的经过校准的二维（2D）数值模拟表明，（i）反向恢复电荷提高了70％，（ii）由于反向恢复而引起的开关损耗提高了70％， （iii）Baliga的品质因数（FOM）与未与肖特基接触的设备相比提高了4.5％。此外，使用非等温模拟分析了从300 K到500 K的器件和电路特性的变化。