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Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures
Semiconductors ( IF 0.6 ) Pub Date : 2021-04-05 , DOI: 10.1134/s1063782621030192 A. M. Strel’chuk , A. A. Lebedev , P. V. Bulat
中文翻译：
勘误到：高温下基于碳化硅的肖特基整流二极管的特性
更新日期：2021-04-05
Semiconductors ( IF 0.6 ) Pub Date : 2021-04-05 , DOI: 10.1134/s1063782621030192 A. M. Strel’chuk , A. A. Lebedev , P. V. Bulat
An Erratum to this paper has been published: https://doi.org/10.1134/S1063782621030192
中文翻译：
勘误到：高温下基于碳化硅的肖特基整流二极管的特性
该论文的勘误已经发布：https://doi.org/10.1134/S1063782621030192
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