Abstract

An analysis of the I–V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive switching in porphyrazine films. A variation in the temperature, the structure of the dielectric matrix, and the type of majority charge carriers makes it possible to estimate the applicability of the model of conducting filaments for describing transport and determining the mechanisms of conduction for each state of the system.

中文翻译：

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卟啉薄膜中电阻转换下电子输运的演化

摘要

通过对I – V特性的分析，可以确定在卟啉嗪膜中进行电阻切换时与流道不同状态相对应的传导机制。温度，介电基质结构和多数电荷载流子类型的变化使得可以估计用于描述传输的导电丝模型的适用性，并确定系统每种状态的导电机理。