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Impact of an External Magnetic Field on Solitary Waves in Quantum Electron–Hole Plasmas of Semiconductors
Semiconductors ( IF 0.7 ) Pub Date : 2021-04-05 , DOI: 10.1134/s1063782621030131
S. Malek , H. Hakimi Pajouh

Abstract

The propagation of solitary acoustic pulses in magnetized quantum electron–hole plasmas of semiconductors has been studied. The effects of an external magnetic field and quantum terms, including the electrons and holes quantum recoil effects, exchange-correlation force, and the degenerate pressure of charge carriers are considered. Starting from quantum hydrodynamic equations, by using the reductive perturbation method, the Zakharov–Kuznetsov equation is derived. The theoretical model is applied to three types of semiconductors, namely GaAs, GaSb, and InP. It is clear that basic features of solitary acoustic waves are modified significantly by plasma parameters, especially number densities of semiconductors and magnetic field strength. The value of the amplitude and width of solitary waves strongly depends on the type of semiconductors and the propagation angle in a magnetized quantum electron-hole semiconductor plasma. Numerical results reveal that the width of the solitons gets reduced significantly with the increase of the magnetic field intensity while there is no effect on the amplitude of solitary waves. The weakest magnetic field that sets the pulse width to zero belongs to GaAs. Finally, the stability of the pulse soliton solution of the Zakharov–Kuznetsov equation has been discussed, analytically and numerically. The instability growth rate depends on plasma parameters and magnetic field intensity. The present paper can be meaningful in studying non-linear phenomena and instability behaviors in magnetized quantum electron–hole plasmas of semiconductors and the particle and energy transport mechanism in plasma-assisted quantum semiconductor nanodevices.



中文翻译:

外部磁场对半导体量子电子-空穴等离子体中的孤立波的影响

摘要

已经研究了孤立的声脉冲在半导体的磁化量子电子-空穴等离子体中的传播。考虑了外部磁场和量子项的影响,包括电子和空穴的量子反冲效应,交换相关力和电荷载流子的退化压力。从量子流体动力学方程出发,通过使用还原摄动法,推导了Zakharov-Kuznetsov方程。该理论模型适用于三种类型的半导体,即GaAs,GaSb和InP。显然,等离子体参数特别是半导体的数量密度和磁场强度极大地改变了孤立声波的基本特征。孤波的振幅和宽度的值在很大程度上取决于半导体的类型和在磁化的量子电子-空穴半导体等离子体中的传播角。数值结果表明,孤子的宽度随着磁场强度的增加而显着减小,而对孤波的幅度没有影响。将脉冲宽度设置为零的最弱磁场属于GaAs。最后,从分析和数值上讨论了Zakharov-Kuznetsov方程的脉冲孤子解的稳定性。不稳定增长率取决于等离子体参数和磁场强度。

更新日期:2021-04-05
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