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Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga 2 O 3 Structures
Semiconductors ( IF 0.6 ) Pub Date : 2021-04-05 , DOI: 10.1134/s1063782621030027
A. V. Almaev , V. I. Nikolaev , S. I. Stepanov , N. N. Yakovlev , A. I. Pechnikov , E. V. Chernikov , B. O. Kushnarev

Abstract

The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the IV characteristics of the Pt/α-Ga2O3/Pt and Pt/Ti/α-Ga2O3/ε-Ga2O3/Ti/Pt structures have a high sensitivity to atmospheric humidity in the temperature range of 25–100°C. It is found that the effect of water vapor on the IV characteristics is reversible, and the most significant current changes in the samples are observed at a relative humidity of RH ≥ 60%. As the temperature rises, the effect of atmospheric humidity on the IV characteristics decreases and disappears at temperatures of T > 100°C. The experimental results obtained are explained within the framework of the Grotthuss mechanism.



中文翻译:

环境湿度对多晶型Ga 2 O 3结构电导率的影响

摘要

环境湿度对α-Ga构成的导电性的效果2 ö 3和α -镓2 ö 3 /ε -镓2 ö 3进行了研究。通过氯化物气相外延的方法在蓝宝石衬底上沉积多态外延Ga 2 O 3层。触点由Pt和Pt / Ti制成。据发现,- V的的Pt /α-镓特性2 ö 3 / Pt和铂/钛/α -镓2 ö 3 /ε -镓2 ö 3/ Ti / Pt结构在25–100°C的温度范围内对大气湿度具有高度敏感性。发现水蒸气对IV特性的影响是可逆的,并且在相对湿度RH≥60%时观察到样品中最明显的电流变化。随着温度升高,大气湿度对IV特性的影响减小,并且在T > 100°C时消失。在Grotthuss机制的框架内解释了获得的实验结果。

更新日期:2021-04-05
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