Abstract

The effect of ambient humidity on the electrical conductivity of α-Ga₂O₃ and α-Ga₂O₃/ε-Ga₂O₃ is investigated. Polymorphic epitaxial Ga₂O₃ layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the I–V characteristics of the Pt/α-Ga₂O₃/Pt and Pt/Ti/α-Ga₂O₃/ε-Ga₂O₃/Ti/Pt structures have a high sensitivity to atmospheric humidity in the temperature range of 25–100°C. It is found that the effect of water vapor on the I–V characteristics is reversible, and the most significant current changes in the samples are observed at a relative humidity of RH ≥ 60%. As the temperature rises, the effect of atmospheric humidity on the I–V characteristics decreases and disappears at temperatures of T > 100°C. The experimental results obtained are explained within the framework of the Grotthuss mechanism.

中文翻译：

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环境湿度对多晶型Ga 2 O 3结构电导率的影响

摘要

环境湿度对α-Ga构成的导电性的效果₂ ö ₃和α -镓₂ ö ₃ /ε -镓₂ ö ₃进行了研究。通过氯化物气相外延的方法在蓝宝石衬底上沉积多态外延Ga ₂ O ₃层。触点由Pt和Pt / Ti制成。据发现，我- V的的Pt /α-镓特性₂ ö ₃ / Pt和铂/钛/α -镓₂ ö ₃ /ε -镓₂ ö ₃/ Ti / Pt结构在25–100°C的温度范围内对大气湿度具有高度敏感性。发现水蒸气对I – V特性的影响是可逆的，并且在相对湿度RH≥60％时观察到样品中最明显的电流变化。随着温度升高，大气湿度对I – V特性的影响减小，并且在T > 100°C时消失。在Grotthuss机制的框架内解释了获得的实验结果。